High-Response, Self-Driving Infrared Photodetection Based on WS2-Graphene Heterostructure and Metal-Oxide-Semiconductor Field Effect Transistor Structure

Abstract

Two-dimensional materials have garnered increasing attention owing to their exceptional photoelectric properties. Among these materials, WS₂ is characterized by its ability to adjust the band gap by altering the number of material layers and to control its Fermi level through external gate voltage. Graphene exhibits an extensive absorption spectrum ranging from ultraviolet to terahertz waves, alongside high carrier mobility and rapid light response. In this study, we made a photodetector based on WS₂-graphene heterostructure and metal-oxide-semiconductor field effect transistor structure. Leveraging the van der Waals heterojunction formed by these two materials, we aim to amalgamate their respective advantages. Moreover, the Fermi level of the material is modulated via gate voltage manipulation. Subsequently, the sample was tested using a laser with a wavelength of 830 nm. Our research reveal its outstanding photoresponsivity, which holds significant implications for near-infrared band photoelectric detection. This research not only advances the realm of photoelectric detection but also introduces a novel option for near-infrared photoelectric sensing applications.