Biuret doping is used to improve the performance of organic/inorganic photodetectors

Abstract

The combination of inorganic semiconductor materials and perovskite materials can improve the performance and stability of photodetectors, and the photodiode prepared by combining Zinc oxide (ZnO) materials and perovskite materials can realize a wide spectrum detection from ultraviolet to near infrared. As the electron transport layer, ZnO film forming quality is very important to improve the performance of photodetectors. Therefore, in order to improve the film forming quality of ZnO, the surface passivation of ZnO films was prepared by doping Biuret into ZnO precursor solution, and its effects on the device working mechanism and device performance were studied. Studies have shown that doping Biuret improves the film forming quality of ZnO, and thus improves the electron transport capacity of ZnO. Meanwhile, the interface contact between ZnO film and perovskite film is optimized, and the film forming quality of perovskite is also improved. The light detection performance of the photodiode prepared by the combination of ZnO material and perovskite material is greatly improved, and the dark current of the device is obviously reduced, which is about 1/5 of the undoped Biuret device. Compared with undoped Biure device, the doped Biure device obtains the photoresponsivity (R) of 17740 mA/W, an increase of about three times. the specific detectivity (D*) has been increased to 1.27×10¹³ Jones, an order of magnitude higher than before.