EFT Immunity Test and Damage Localization of C-band Limiters

Abstract

In this paper, the EFT immunity experimental platform of C-band RF limiter is designed, and then electromagnetic immunity test and device damage analysis are carried out.When the voltage of the EFT interference source exceeds 900V, the device experiences increased insertion loss. When the interference continues to increase to 1000V, the device is damaged.Failure localization was carried out for the failed sample.Failure Location Using Electromagnetic Emission Measurement Techniques.By analyzing the emitted electromagnetic field map (EMF), it was concluded that PIN diodes are more susceptible to damage.The device was then disassembled and the failed component replaced, proving the accuracy of the location of the failure point.