Simulation study on 300mm monocrystalline silicon celerity single crystal

Abstract

Since entering the 21st century, the survival and development of mankind are faced with great challenges and great opportunities. With the decrease of petroleum, coal, natural gas and other resources, a large number of harmful products generated in the combustion process of fossil fuels have caused incalculable adverse effects on human living environment. Thermal stress in crystals is one of the key factors affecting the properties of solar level monocrystalline silicon. In this paper, the relationship between the heat loss mode and the stress in crystal is studied. If carbon is introduced into the crystal growth process, it will promote the formation of oxygen precipitation and SiC precipitated phase, resulting in increased stress in the crystal, thus affecting the quality of monocrystalline silicon. The distribution of carbon impurities in the melt is closely related to the convection behavior of the melt. The carbon atoms in the atmosphere diffused into the melt mainly through the free surface area near the crucible wall. By adjusting the structural parameters of symmetric magnetic field and asymmetric magnetic field, the convection intensity in the carbon atom doped region can be suppressed, the thickness of carbon atom diffusion layer can be increased, and the oxygen content and distribution uniformity in the crystal can be controlled by magnetic pull technology to improve the crystal quality.